This paper presents a novel GaN-based digital outphasing power amplifier (PA) for the 800 MHz range. The PA reaches a maximum output power of 5.8 W at 30 V final-stage (FS) drain supply voltage. A novel output combiner circuit is used and efficiency is improved by resonant commutation of the FSs and optimized driver circuits for the two GaN push-pull FSs. 3D electromagnetic simulation of output network has been conducted to extract an equivalent circuit model and to access full information in terms of functionality and broadband impedance characteristics for optimized outphasing operation in the final design. Measured total efficiencies (ηtot) of 59 and 25% at 0 and 10 dB power back-off are achieved, respectively, fitting the simulation quite well. The proposed digital outphasing module is a promising candidate for fully digitized base-station architectures in future wireless communications.

中文翻译：

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GaN数字微波异相PA

本文介绍了一种适用于 800 MHz 范围的新型基于 GaN 的数字异相功率放大器 (PA)。PA 在 30 V 末级 (FS) 漏极电源电压下达到 5.8 W 的最大输出功率。使用了一种新颖的输出组合器电路，并通过 FS 的谐振换向和两个 GaN 推挽 FS 的优化驱动电路来提高效率。已经对输出网络进行了 3D 电磁仿真，以提取等效电路模型并获取有关功能和宽带阻抗特性的完整信息，以在最终设计中优化异相操作。测得的总效率 (η总) 在 0 和 10 dB 功率回退时分别实现了 59% 和 25%，非常适合模拟。所提出的数字异相模块是未来无线通信中全数字化基站架构的有希望的候选者。