We have developed planar nanoSQUID with nanobridge-type Josephson junctions based on the oxidation resistant and high H c2 MoRe alloy. The objective of the research was to reduce size of the SQUID loop with the aim being to reduce magnetic flux noise and improve the spatial resolution of the SQUID sensors. Employing RF-magnetron sputtering, electron-beam lithography, and reactive ion etching in CHF3 + O2 plasma using Al hard masks, we have realized nanoSQUIDs with Josephson junctions in the form of 30 - 50 nm wide nanobridges and an effective magnetic flux capture radius of ∼ 95 nm. The critical temperature of the fabricated devices was T c = 7.9 K. The I(V)-characteristics demonstrated critical current I 0≃ 114 µA at 4.2 K and modulation period in magnetic fields of ∼ 700 Oe.

中文翻译：

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基于平面 MoRe 的直流纳米 SQUID

我们开发了基于抗氧化和高 H c2 MoRe 合金的具有纳米桥型约瑟夫森结的平面 nanoSQUID。研究的目的是减小 SQUID 回路的尺寸，目的是降低磁通量噪声并提高 SQUID 传感器的空间分辨率。在使用铝硬掩​​模的 CHF3 + O2 等离子体中采用射频磁控溅射、电子束光刻和反应离子蚀刻，我们已经实现了具有约瑟夫森结的纳米 SQUID，其形式为 30 - 50 nm 宽的纳米桥和有效的磁通量捕获半径为约 95 纳米。制造的器件的临界温度为 T c = 7.9 K。 I(V) 特性表明临界电流 I 0≃ 114 µA 在 4.2 K 和磁场中的调制周期约为 700 Oe。