In0.53Ga0.47As based Gate-All-Around (GAA) MOSFETs are being pursued as a promising solution to high speed ULSI chip design because of improved gate-channel electrostatic, excellent immunity to short channel effects, high carrier mobility and increased drain current. However, the GAA devices are highly prone to self-heating, and hot carrier injection (HCI) induced effects because of the absence of a proper heat take out mechanism. In this paper, 3-D electrothermal (ET) simulations are performed on In0.53Ga0.47As GAA MOSFETs using the hydrodynamic (HD) model to access the impact of self-heating on the electrical characteristics of the device. Fiegna hot-carrier injection model is used in simulations to estimate the HCI into the oxide region. A thorough understanding of dependencies of lattice temperature and carrier temperature on spacer length, drain voltage, gate voltage, and thermal contact resistance is acquired. HCI degradation dependence on thermal contact resistance is also extensively studied using Sentauras based TCAD simulator.

中文翻译：

---

In _0.53 Ga _0.47 As Gate-All-Around (GAA) MOSFET 中的自热效应和热载流子退化

基于 In0.53Ga0.47As 的全环栅 (GAA) MOSFET 因其改进的栅极沟道静电、出色的短沟道效应抗扰度、高载流子迁移率和增加的漏极电流而被视为高速 ULSI 芯片设计的有前途的解决方案. 然而，由于缺乏适当的散热机制，GAA 器件极易发生自热和热载流子注入 (HCI) 诱导效应。在本文中，使用流体动力学 (HD) 模型对 In0.53Ga0.47As GAA MOSFET 进行 3-D 电热 (ET) 模拟，以了解自热对器件电气特性的影响。Fiegna 热载流子注入模型用于模拟以估计进入氧化物区域的 HCI。彻底了解晶格温度和载流子温度对间隔物长度的依赖性，获得漏极电压、栅极电压和热接触电阻。还使用基于 Sentauras 的 TCAD 模拟器广泛研究了 HCI 退化对接触热阻的依赖性。