The structure of the conventional laterally diffused metal-oxide semiconductor (LDMOS) is modified to be fit for application of a self-triggered technique in multi-fingered high-voltage LDMOS devices to enhance the electrostatic discharge (ESD) current-handling capability. Device simulation and transmission line pulse testing are employed to analyze the working mechanism and ESD performance of the proposed device with self-triggered technique based on a 0.5 µ m 24 V CMOS DMOS (CDMOS) process. According to the measurement results, compared to traditional gate-grounded LDMOS, the secondary breakdown current ( ##IMG## [http://ej.iop.org/images/0268-1242/35/6/065010/sstab807dieqn1.gif] {${I_{t2}}$} ) of the proposed device with low-trigger-voltage triggering finger can be drastically improved from 2.43 A to 5.57 A, and its trigger voltage ( ##IMG## [http://ej.iop.org/images/0268-1242/35/6/065010/sstab807dieqn2.gif] {${V_{t1}}$} ) is redu...

中文翻译：

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利用自触发技术提高高压多指nLDMOS器件的静电放电电流处理能力

修改了传统的横向扩散金属氧化物半导体（LDMOS）的结构，以适合在多指高压LDMOS器件中应用自触发技术，以增强静电放电（ESD）电流处理能力。利用器件仿真和传输线脉冲测试，以基于0.5 µm 24 V CMOS DMOS（CDMOS）工艺的自触发技术分析了该器件的工作机理和ESD性能。根据测量结果，与传统的栅极接地LDMOS相比，二次击穿电流（## IMG ## [http://ej.iop.org/images/0268-1242/35/6/065010/sstab807dieqn1.gif ] {$ {I_ {t2}} $}）所建议的具有低触发电压触发手指的设备可以从2.43 A大幅提高到5.57 A，