Charge transfer processes via deep levels (DLs) of a free-standing n-GaN grown by hydride vapor phase epitaxy is investigated using two types of excitations in time resolved photoluminescence (PL) analysis: above the bandgap energy ( E g ) (AEG) and sub- E g (SEG). Using SEG excitation allowing us the PL observation free from carrier dynamics around band-edges such as excitonic recombination varying the population influx to DLs, intrinsic properties of DL-related PL and charge transfer processes are exhibited. The shortening of PL lifetime of red-light luminescence accompanied by a slight increase in its intensity by increasing temperature suggests the dominance of radiative transition.

中文翻译：

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上面和子带隙能量激励分析的与独立n-GaN层中深能级有关的电荷转移过程

在时间分辨光致发光（PL）分析中使用两种类型的激发来研究通过氢化物气相外延生长的自立n-GaN的深能级（DL）进行的电荷转移过程：在带隙能量（E g）（AEG）以上和sub-E g（SEG）。使用SEG激发，我们可以观察到PL周围带边没有载流子动力学，例如激子复合，改变了人口向DL的流入，展示了DL相关PL的内在特性和电荷转移过程。红光发光的PL寿命缩短，同时随着温度的升高其强度略有增加，这表明辐射跃迁占主导地位。