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Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width
Chinese Physics Letters ( IF 3.5 ) Pub Date : 2020-04-01 , DOI: 10.1088/0256-307x/37/4/044203
Chong-Biao Luan , Hong-Tao Li

We demonstrate that the transport of hot carriers may result in the phenomenon where an oscillated output current appears at the waveforms in a high-power photoconductive semiconductor switch (PCSS) working at long pulse width when the laser disappears or the electric field changes. The variational laser and electric field will affect the scattering rates of hot carriers and crystal lattice in high-power PCSS, and the drift velocity of hot carriers and also the on-state resistance will be changed. The present result is important for reducing the on-state resistance and improving the output characteristics of high-power Si/GaAs PCSS.

中文翻译:

热载流子对长脉宽工作的 Si 和 GaAs 光电导半导体开关导通电阻的影响

我们证明了热载流子的传输可能导致当激光消失或电场变化时在长脉冲宽度下工作的高功率光电导半导体开关(PCSS)的波形上出现振荡输出电流的现象。变化的激光和电场会影响高功率PCSS中热载流子和晶格的散射率,热载流子的漂移速度和导通电阻都会发生变化。目前的结果对于降低导通电阻和改善高功率 Si/GaAs PCSS 的输出特性具有重要意义。
更新日期:2020-04-01
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