ABSTRACT An anomalous total dose effect that the wider channel device is more susceptible to total ionizing dose than the narrow one is observed with the 0.13 µm H-gate partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel widths may exhibit an enhanced reverse narrow channel effect after radiation. This is because in the case of bias of TG irradiation, there will be an electric field from source to drain to the body area, which will affect the electric field linear density of the source and drain to the buried oxygen layer area. Compared with narrow-channel devices, the electric field from drain/source to body region via box region of wide-channel devices accounts for a larger proportion, and the more oxide trap charges will be generated, which will cause greater damage.

中文翻译：

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沟道宽度对 130 nm H 栅极部分耗尽 SOI NMOSFET 总电离剂量响应的影响

摘要 使用 0.13 µm H 栅极部分耗尽绝缘体上硅技术观察到了一种反常的总剂量效应，即较宽的通道器件比窄通道器件更容易受到总电离剂量的影响。测量结果和 3D 技术计算机辅助设计模拟表明，具有不同通道宽度的器件在辐射后可能表现出增强的反向窄通道效应。这是因为在TG照射偏压的情况下，从源极到漏极到体区会有一个电场，这会影响源漏到埋氧层区的电场线密度。与窄沟道器件相比，通过宽沟道器件的盒区从漏/源到体区的电场占更大比例，