ABSTRACT Charge coupled devices with high sensitivity and low dark current were irradiated separately by 10 MeV proton, 14 and 1 MeV neutron up to the fluences of 109 cm−2. The generation pattern of hot pixels at different conditions is presented. The experimental results demonstrate that the nuclear inelastic scattering is the dominant generation mechanism of hot pixels induced by proton and neutron irradiations. Meanwhile, a theoretical model is used to predict hot pixel tails at different annealing time points and different operating temperatures.

中文翻译：

---

电荷耦合器件中质子和中子辐照引起的热像素研究

摘要 具有高灵敏度和低暗电流的电荷耦合器件分别被 10 MeV 质子、14 和 1 MeV 中子辐照，能量密度高达 109 cm-2。给出了不同条件下热像素的生成模式。实验结果表明，核非弹性散射是质子和中子辐照引起的热像素的主要产生机制。同时，使用理论模型来预测不同退火时间点和不同工作温度下的热像素拖尾。