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MOSFET‐C‐based grounded active inductors with electronically tunable properties
International Journal of RF and Microwave Computer-Aided Engineering ( IF 0.9 ) Pub Date : 2020-05-12 , DOI: 10.1002/mmce.22274 Abdullah Yesil 1 , Erkan Yuce 2 , Shahram Minaei 3
International Journal of RF and Microwave Computer-Aided Engineering ( IF 0.9 ) Pub Date : 2020-05-12 , DOI: 10.1002/mmce.22274 Abdullah Yesil 1 , Erkan Yuce 2 , Shahram Minaei 3
Affiliation
In this study, two new grounded metal oxide semiconductor field effect transistor (MOSFET)‐C active inductors (AIs) are proposed. The proposed AIs contain only eight MOS transistors and a single grounded capacitor that is attractive for integrated circuit fabrication. Inductance values of them can be electronically tuned by a single control voltage. They do not include any current sources. Therefore, the designs of the proposed AIs are simple and useful. They do not suffer from body effects. Hence, they can be designed with low power supply voltages. Simulation results by using the Cadence analog environment program with 180 nm Taiwan Semiconductor Manufacturing Company (TSMC) nm technology parameters are carried out to indicate the performance of them. Layouts of both proposed AIs occupy the same area of about 78 μm × 78 μm. Postlayout simulation results are given to confirm the validity of the theoretical analysis.
更新日期：2020-05-12
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