Liquid‐Metal‐Induced Memristor Behavior in Polymer Insulators,Physica Status Solidi-Rapid Research Letters

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Liquid‐Metal‐Induced Memristor Behavior in Polymer Insulators
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-05-12 , DOI: 10.1002/pssr.202070023
Muhammad Zaheer ₁ , Yichen Cai ₁ , Abu Bakar Waqas ₁ , Saadullah Farooq Abbasi ₁ , Guodong Zhu ₂ , Chunxiao Cong ₁ , Zhi-Jun Qiu ₁ , Ran Liu ₁ , Yajie Qin ₁ , Lirong Zheng ₁ , Laigui Hu ₁

Affiliation

Resistive switching devices have neuromorphic capabilities that are especially appealing as an active component for electronic gates and memories. In this regard electrode materials, e.g. silver, play a significant role; to accomplish resistive memory behavior, researchers have to design sophisticated architectures with distinct materials as insulator layers and electrodes. In article number 2000050, Laigui Hu and co‐workers report a liquid‐metal‐based resistive memory with general insulators. In all‐organic materials under electrical bias, liquid metals can easily form switchable conductive filaments. This can open up opportunities for the use of liquid metals for neuromorphic interfaces and memristors in various applications.

中文翻译：

聚合物绝缘子中液态金属诱导的忆阻器行为

电阻开关设备具有神经形态功能，特别适合作为电子门和存储器的有源组件。在这方面，电极材料（例如银）起着重要作用；为了实现电阻式记忆行为，研究人员必须设计复杂的架构，并使用不同的材料作为绝缘体层和电极。胡来贵及其同事在文章编号2000050中报告了一种具有通用绝缘体的基于液态金属的电阻式存储器。在带有电偏压的所有有机材料中，液态金属很容易形成可切换的导电丝。这可以为在各种应用中将液态金属用于神经形态界面和忆阻器开辟机会。

更新日期：2020-05-12

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