Abstract The temperature dependent polarization properties along the c-axis of 1T-TaS2 single crystals are investigated. The dielectric constant in MHz region enhances with cooling from 150 K down to 12 K, whereas the spectra disperse only slightly. The dielectric loss spectra at various temperatures indicate a hopping process of localized carriers induced by the out-of-plane stacking disorder. We propose that the enhancement of the polarization with decreasing temperature can be explained by an electrostatic-shielding effect associated with carriers localized in small metallic domains.

中文翻译：

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体 1T-TaS2 中相称 CDW 相中沿 c 轴的介电响应导致堆叠无序的证据

摘要 研究了 1T-TaS2 单晶沿 c 轴的温度相关偏振特性。MHz 区域的介电常数随着从 150 K 冷却到 12 K 而增强，而光谱仅略微分散。不同温度下的介电损耗谱表明了由面外堆叠无序引起的局部载流子的跳跃过程。我们提出，随着温度降低，极化增强可以通过与位于小金属域中的载流子相关的静电屏蔽效应来解释。