Abstract We present a detailed analysis of the second-order correlation behavior of photons emitted from an InGaN QD in a photonic horn structure in order to discuss the excitation, emission, and environmental dynamics that impact the emission. We report the observation of a clear saturation in the antibunching decay rate as the excitation power is increased. We describe the saturation with a simple model describing a saturating excitation path, possibly via inefficient carrier relaxation into the QD emitting state.

中文翻译：

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光子喇叭结构中单光子发射 InGaN 量子点的激发和发射动力学

摘要 我们详细分析了从 InGaN QD 在光子喇叭结构中发射的光子的二阶相关行为，以讨论影响发射的激发、发射和环境动力学。我们报告了随着激发功率的增加，观察到反聚集衰减率明显饱和。我们用一个描述饱和激发路径的简单模型来描述饱和，可能是通过低效的载流子弛豫进入 QD 发射状态。