Zinc (Zn) and tin (Sn) based alloy thin films have been of recent interest in the semiconductor industry. Despite such interest, knowledge on how the concentration of Sn affects the chemical, electrical, optical and surface properties SnZn thin films is still scarce. In this paper, SnZn thin films with varying ratios of Zn to Sn were fabricated through radio frequency (rf) magnetron sputtering. The resulting SnZn thin films were analyzed using scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), contact angle measurements, a 4-point probe, X-ray diffraction (XRD) patterns, and ultraviolet photoelectron spectroscopy (UPS). According to our results, The SnZn thin films that were fabricated using an rf power of 15 W to the Sn target had the roughest surface morphology and the films fabricated using an rf power of 10 W to the Sn target had the largest grain size. Contact angle measurements and 4 point probe measurements revealed that the SnZn were overall hydrophobic and the electrical conductivity increased with doping higher concentrations of Sn. XRD showed that SnZn thin films had larger grain sizes than pure Zn thin films. XPS and UPS analysis suggested the Fermi level was brought closer to the vacuum level when Sn was doped in Zn thin films.

锌（Zn）和锡（Sn）基合金薄膜最近在半导体工业中引起关注。尽管有这样的兴趣，关于Sn的浓度如何影响SnZn薄膜的化学，电，光学和表面性质的知识仍然很少。本文通过射频（RF）磁控管溅射制备了Zn与Sn比例不同的SnZn薄膜。使用扫描电子显微镜，原子力显微镜，X射线光电子能谱（XPS），接触角测量，4点探针，X射线衍射（XRD）图案和紫外光电子能谱（UPS）对所得的SnZn薄膜进行分析）。根据我们的结果，使用15W的rf功率对Sn靶材制造的SnZn薄膜具有最粗糙的表面形态，并且使用10W的rf功率对Sn靶材制造的膜具有最大的晶粒尺寸。接触角测量和四点探针测量显示，SnZn总体上是疏水的，并且电导率随着掺杂更高浓度的Sn而增加。X射线衍射表明，SnZn薄膜的晶粒尺寸大于纯Zn薄膜。XPS和UPS分析表明，当将Sn掺杂到Zn薄膜中时，费米能级接近真空度。X射线衍射表明，SnZn薄膜的晶粒尺寸大于纯Zn薄膜。XPS和UPS分析表明，当将Sn掺杂到Zn薄膜中时，费米能级接近真空度。X射线衍射表明，SnZn薄膜的晶粒尺寸大于纯Zn薄膜。XPS和UPS分析表明，当将Sn掺杂到Zn薄膜中时，费米能级接近真空度。