Manganese Doping Stabilizes Perovskite Light-Emitting Diodes by Reducing Ion Migration,ACS Applied Electronic Materials

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Manganese Doping Stabilizes Perovskite Light-Emitting Diodes by Reducing Ion Migration
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-05-12 , DOI: 10.1021/acsaelm.0c00125
Moritz H. Futscher ₁ , Mahesh K. Gangishetty ₂ , Daniel N. Congreve ₂ , Bruno Ehrler ₁

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Lead-halide perovskite light-emitting diodes have recently emerged as high-performance devices. However, they degrade rapidly. This degradation has been attributed to the mixed ionic–electronic nature of these perovskites. Manganese doping increases the stability of perovskite light-emitting diodes, but the effects of manganese doping on ion migration are not well understood. We use impedance spectroscopy and transient ion-drift measurements to study the effect of manganese doping on ion migration in PEABr_0.2Cs_0.4MA_0.6PbBr₃ quasi-bulk two-/three-dimensional perovskite light-emitting diodes. We find that manganese doping enhances the activation energy for ion migration twofold and reduces the diffusion coefficient. These changes in the behavior of mobile ions help us to explain the improved stability in perovskite light-emitting diodes upon manganese doping and lead to a better understanding of the influence of passivating agents on ion migration and thus on the stability of the devices.

中文翻译：

锰掺杂通过减少离子迁移来稳定钙钛矿发光二极管。

卤化钙钛矿型发光二极管最近已成为高性能器件。但是，它们迅速降解。这种降解归因于这些钙钛矿的混合离子电子性质。锰掺杂可增加钙钛矿发光二极管的稳定性，但锰掺杂对离子迁移的影响尚不十分清楚。我们使用阻抗光谱和瞬态离子漂移测量来研究锰掺杂对PEABr _0.2 Cs _0.4 MA _0.6 PbBr _3中离子迁移的影响准本体二维/三维钙钛矿发光二极管。我们发现锰掺杂可将离子迁移的活化能提高两倍，并降低扩散系数。流动离子行为的这些变化有助于我们解释锰掺杂后钙钛矿发光二极管稳定性的提高，并有助于更好地理解钝化剂对离子迁移的影响，从而对器件的稳定性也有帮助。

更新日期：2020-06-23

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