Abstract

Ce³⁺, P⁵⁺, Ca²⁺, and Zn²⁺ ion doped Gd₂SiO₅ crystals are grown by the Czochralski method. The pulsed cathodoluminescence spectra, light yield, and scintillation time under gamma excitation are studied. It is first shown that additional doping with P⁵⁺ phosphorus ions decreases crystal cracking in the fabrication of scintillation elements, and increases the scintillation light yield in comparison with commercial Gd₂SiO₅:Ce³⁺ crystals.

中文翻译：

---

P 5+离子掺杂Gd 2 SiO 5：Ce 3+闪烁晶体

摘要

通过切克劳斯基方法生长了Ce ³⁺，P ⁵⁺，Ca ²⁺和Zn ²⁺离子掺杂的Gd ₂ SiO ₅晶体。研究了在伽马激发下的脉冲阴极荧光光谱，光产量和闪烁时间。首先表明，与商业化的Gd ₂ SiO ₅：Ce ³⁺晶体相比，P ⁵⁺磷离子的额外掺杂减少了闪烁元件制造中的晶体破裂，并增加了闪烁光的产量。