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Design of Voltage Level Shifter Using CNTFETs
National Academy Science Letters ( IF 1.2 ) Pub Date : 2020-04-01 , DOI: 10.1007/s40009-020-00969-1
Vikash Prasad , Debaprasad Das

Level shifters (LSs) are used to interface with different voltage domains. In this work, a voltage LS is presented for different ranges of input–output voltage conversion. This design presents a high-speed, energy-efficient and robust dual-supply level converter based on multi-threshold carbon nanotube FETs (CNTFETs). The chirality of CNTs is suitably chosen to adjust the threshold voltage of CNTFETs. The proposed circuit is capable of shifting the input voltage level from the deep sub-threshold (0.25 V) to the above-threshold domain (0.45 V) and above-threshold (0.45 V) to nominal voltage domain (0.9 V). The results of the simulation are obtained based on the MOSFET-like CNTFET model at 32 nm technology node. The proposed circuit exhibits an average propagation delay of \(\sim\)63 ps and \(\sim\)32 ps, for two different voltage levels, respectively, and dissipates lesser static power than the existing circuits based on CNTFET.



中文翻译:

使用CNTFET的电压电平转换器设计

电平转换器(LS)用于与不同的电压域接口。在这项工作中,针对输入-输出电压转换的不同范围提出了电压LS。该设计提出了一种基于多阈值碳纳米管FET(CNTFET)的高速,节能且坚固的双电源电平转换器。适当地选择CNT的手性来调节CNTFET的阈值电压。所提出的电路能够将输入电压电平从深亚阈值(0.25 V)移至阈值以上域(0.45 V),并将阈值以上(0.45 V)移至标称电压域(0.9 V)。仿真结果是基于在32 nm技术节点上的类似MOSFET的CNTFET模型获得的。拟议的电路表现出平均传播延迟为\(\ sim \) 63 ps和\(\ sim \)与两个基于CNTFET的现有电路相比,两个不同的电压电平分别为32 ps,并且耗散的静态功率更少。

更新日期:2020-04-01
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