We study the dynamics of charge carriers jumping from one trap to the other of potential trap depth Φ in a one-dimensional semiconductor layer with the help of thermal noise. Applying a nonuniform temperature, colder around the center and hotter on moving away from it, favors the charge carriers to migrate toward the center and populate around the center. However, exposing the system to another additional nonuniform temperature, hotter around the center, forced the charge carriers to redistribute around two points. The trap potential together with the nonuniform temperature forms a system similar to having bistable potential. Diffusion of charge carriers and thermally transition rate, in a high barrier limit, as a function of controlling parameters has been explored. Due to a time-varying signal the system shows stochastic resonance (SR). The noise that made phase transition also favors the system to exhibit SR by applying a time varying signal. Using two-state approximation, SR of charge carriers diffusion, both analytical and numerical simulation, has been investigated. Our finding shows a strong spectral amplification η at a low temperature.

我们借助热噪声研究了一维半导体层中载流子从一个陷阱跃迁到另一个势阱深度Φ的动力学。施加不均匀的温度，中心周围会变冷，远离中心会变热，这有利于电荷载流子向中心迁移并在中心周围聚集。但是，使系统暴露于另一个附加的非均匀温度（中心附近较热），迫使电荷载流子在两点附近重新分布。陷阱电势与温度不均匀一起形成类似于具有双稳态电势的系统。已经探索了在高势垒极限中作为控制参数的函数的载流子的扩散和热转变速率。由于时变信号，系统显示出随机共振（SR）。通过施加时变信号，引起相变的噪声也有利于系统表现出SR。使用二态逼近，研究了载流子扩散的SR，无论是分析还是数值模拟。我们的发现显示出强大的光谱放大低温下的η。