In this paper, we have investigated nonequilibrium effects for advanced MOSFETs by using a device simulator with quantum energy transport (QET) model. The QET model allows to simulate nonequilibrium carrier transport as well as quantum confinement. The QET model includes the mobility model as a function of carrier temperature in order to consider the nonlocal effects. We have simulated advanced MOSFETs down to 20 nm gate length using the QET model. The QET model is compared with the quantum drift diffusion (QDD) model which includes a mobility model with local assumptions. It is found that the nonlocal mobility model is needed to simulate the advanced MOSFETs with less than 40 nm.

中文翻译：

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利用量子能量传输模型分析高级MOSFET的电特性非平衡现象

在本文中，我们通过使用具有量子能量传输（QET）模型的器件仿真器研究了高级MOSFET的非平衡效应。QET模型允许模拟非平衡载流子传输以及量子限制。QET模型包括迁移率模型作为载流子温度的函数，以考虑非局部效应。我们使用QET模型模拟了栅极长度低至20 nm的先进MOSFET。将QET模型与包括局部假设的迁移率模型的量子漂移扩散（QDD）模型进行了比较。发现需要非局部迁移率模型来模拟小于40 nm的高级MOSFET。