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Analysis of saturation velocity and energy relaxation time of electrons in Si using full‐band Monte Carlo simulation
Electrical Engineering in Japan ( IF 0.4 ) Pub Date : 2020-04-13 , DOI: 10.1002/eej.23263
Koki Yoshihara 1 , Akira Hiroki 1
Affiliation  

In this paper, we have investigated the influence of optical phonon energy on electron saturation velocity and energy relaxation time by using a full band Monte Carlo simulator. The energy band structure is obtained using the first principle calculation. The scattering probability is calculated so as to conserve the energy and momentum in the full band structure. It is found that the range of optical phonon energy from 56.2 to 63.9 meV allows experimental saturation velocity and energy relaxation time. Electron saturation velocity is more sensitive than relaxation time to the optical phonon energy.

中文翻译:

全波段蒙特卡洛模拟分析硅中电子的饱和速度和能量弛豫时间

在本文中,我们通过使用全频带蒙特卡罗模拟器研究了光子能量对电子饱和速度和能量弛豫时间的影响。使用第一原理计算获得能带结构。计算散射概率以便在全频带结构中节省能量和动量。发现光子能量的范围从56.2到63.9 meV,可以实现实验饱和速度和能量弛豫时间。电子饱和速度比弛豫时间对声子能量更敏感。
更新日期:2020-04-13
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