Effect of growth modes on electrical and thermal transport of thermoelectric ZnO:Al films.,Acta Crystallographica Section B

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Effect of growth modes on electrical and thermal transport of thermoelectric ZnO:Al films.
Acta Crystallographica Section B ( IF 1.3 ) Pub Date : 2020-03-19 , DOI: 10.1107/s2052520620002383
Shiying Liu ₁ , Guojian Li ₁ , Mingdi Lan ₁ , Yongjun Piao ₁ , Koji Miyazaki ₂ , Qiang Wang ₁

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Electrical and thermal transport controlled by growth mode can be used to optimize thermoelectric properties of ZnO:Al films, which was adjusted by the re‐evaporation of Zn and Al via substrate temperatures. The growth modes include equiaxed crystal, columnar crystal and coexistence of both crystals. In the ZnO:Al film, equiaxed crystals improve the carrier mobility and reduce the lattice thermal conductivity. Thus, the carrier mobility and thermal conductivity are tuned by the ratio of equiaxed crystals to columnar crystals. The carrier mobility is dependent on the growth‐mode‐related defects of oxygen vacancies, zinc interstitials and the substitutional dopant of Al. Improved thermoelectric properties with a power factor of 198.45 µW m⁻¹ K⁻² at 510 K were achieved. This study presents a film with the structure of an equiaxed‐crystal buffer layer to enhance its thermoelectric properties.

中文翻译：

生长方式对热电ZnO：Al薄膜的电和热传输的影响。

由生长模式控制的电和热传输可用于优化ZnO：Al膜的热电性能，可通过衬底温度重新蒸发Zn和Al来调节。生长方式包括等轴晶体，柱状晶体以及两种晶体的共存。在ZnO：Al膜中，等轴晶提高了载流子迁移率并降低了晶格热导率。因此，载流子迁移率和热导率通过等轴晶体与柱状晶体的比率来调节。载流子迁移率取决于氧空位，锌间隙和Al的替代掺杂物与生长模式相关的缺陷。改善的热电特性，功率因数为198.45 µW m ^-1 K ^-2达到了510 K 这项研究提出了一种具有等轴晶体缓冲层结构的薄膜，以增强其热电性能。

更新日期：2020-03-19

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