Devices in the form of TiN/ferroelectric‐HfZrO_x (FE‐HZO)/polycrystalline or epitaxial GeSn are used to investigate how the crystallinity of GeSn film affects the behaviors and reliability performance. FE‐HZO on epitaxial GeSn film reveals higher ferroelectricity as evidenced by a larger remanent polarization (P_r) by 21% as compared with that formed on polycrystalline GeSn film. Devices with epitaxial GeSn film also demonstrate higher dipole switching speed, more robust endurance up to 10⁶ cycles (±3.3 MV cm⁻¹, long pulse width of 1 ms) and better retained polarization up to 10⁴ s. The essential factor that determines the more desirable ferroelectric behaviors and reliability lies in the higher quality of the interfacial layer between HZO and GeSn film which helps suppress defect generation and charge trapping. The research results also highlight the importance to improve the interfacial layer quality for enhanced performance of ferroelectric devices formed on polycrystalline semiconductor.

中文翻译：

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具有金属-铁电-半导体结构的器件中GeSn结晶度对铁电HfZrOx可靠性的影响

TiN /铁电-HfZrO _x（FE-HZO）/多晶或外延GeSn形式的器件用于研究GeSn膜的结晶度如何影响其性能和可靠性。外延GeSn膜上的FE‐HZO表现出更高的铁电性，与多晶GeSn膜上形成的相比，剩余极化强度（P _r）增大了21％。带有外延GeSn薄膜的器件还显示出更高的偶极开关速度，高达10 ⁶个周期（±3.3 MV cm ^-1，更长的脉冲宽度1 ms）更强的耐用性以及高达10 ^4的保留极化 s。决定更理想的铁电性能和可靠性的基本因素在于HZO和GeSn膜之间界面层的较高质量，这有助于抑制缺陷的产生和电荷的俘获。该研究结果还强调了提高界面层质量对增强多晶半导体上形成的铁电器件性能的重要性。