In this article, the influence of the self-heating effect (SHE) on fin-shaped field-effect transistors (FinFETs) and gate-all-around field-effect transistors (GAAFETs) was investigated. The AC analysis with the input of a square pulse at the gate electrode was implemented to estimate the effect of SHE on the leakage current characteristics. The high-frequency operating region from 500 MHz to 50 GHz was simulated for the comparison at each different operating frequency. The high operating frequency indicates that there is not enough time to relieve the heat generated by SHE during the off-phase of the pulse. Thus, as the operating frequency increases, the off-state leakage current induced by SHE increases accordingly. The so-called thermal time constant (τTH) was examined for both FinFETs and GAAFETs by comparing the thermal resistance (RTH) and thermal capacitance (CTH) to minimize SHE on leakage current in the simulation environment.

中文翻译：

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FinFETs和Gate-all-around FETs在高频工作状态下自热效应引起的离相漏电流劣化

在本文中，研究了自热效应 (SHE) 对鳍形场效应晶体管 (FinFET) 和环栅场效应晶体管 (GAAFET) 的影响。在栅电极处输入方波脉冲进行交流分析，以估计 SHE 对漏电流特性的影响。模拟了从 500 MHz 到 50 GHz 的高频工作区域，以便在每个不同的工作频率下进行比较。高工作频率表明没有足够的时间来释放脉冲关闭阶段 SHE 产生的热量。因此，随着工作频率的增加，SHE引起的关态漏电流也相应增加。