In this article, we investigate the four-level random telegraph noise (RTN) characteristics of a gate-all-around (GAA) nanowire (NW) transistor. The RTN-testing devices were fabricated with the sidewall spacer etching technique. The effective channel length and width are approximately 150 and 30 nm, respectively. By decoupling the four-level RTN, we are able to extract the time constants associated with the two traps. Circle-shaped approximations are used to mimic the triangular NW for evaluating the depths of the traps. The extracted depths of the two traps are very close to each other, which is consistent with the time-evolution measured results. We've also explored the probabilities of transitions between two specific current levels in the RTN characteristics, as well as the relative trapping/de-trapping frequencies.

中文翻译：

---

环栅多晶硅纳米线晶体管中四级随机电报噪声的捕获深度和跃迁概率

在本文中，我们研究了环栅 (GAA) 纳米线 (NW) 晶体管的四级随机电报噪声 (RTN) 特性。RTN 测试设备是用侧壁间隔蚀刻技术制造的。有效沟道长度和宽度分别约为 150 和 30 nm。通过解耦四级 RTN，我们能够提取与两个陷阱相关的时间常数。圆形近似值用于模拟三角形 NW 以评估陷阱的深度。两个圈闭提取深度非常接近，与时间演化测量结果一致。我们还探讨了 RTN 特性中两个特定电流水平之间转换的概率，以及相对陷印/去陷印频率。