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Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature.
Advanced Science ( IF 14.3 ) Pub Date : 2020-05-10 , DOI: 10.1002/advs.202000068
Yifan Dong 1, 2 , Mengyu Chen 2 , Wai Kin Yiu 3 , Qiang Zhu 2 , Guodong Zhou 2 , Stephen V Kershaw 3 , Ning Ke 2 , Ching Ping Wong 2, 4 , Andrey L Rogach 3 , Ni Zhao 2
Affiliation  

Narrow bandgap semiconductor‐based photodetectors often suffer from high room‐temperature noise and are therefore operated at low temperatures. Here, a hybrid poly(3‐hexylthiophene) (P3HT): HgTe quantum dot (QD) phototransistor is reported, which exhibits high sensitivity and fast photodetection up to 2400 nm wavelength range at room temperature. The active layer of the phototransistor consists of HgTe QDs well dispersed in a P3HT matrix. Fourier‐transform infrared spectra confirm that chemical grafting between P3HT and HgTe QDs is realized after undergoing prolonged coblend stirring and a ligand exchange process. Thanks to the shifting of the charge transport into the P3HT and the partial passivation of the surface traps of HgTe QDs in the blend, the P3HT: HgTe QD hybrid phototransistor shows significantly improved gate‐voltage tuning, 15 times faster response, and ≈80% reduction in the noise level compared to a pristine HgTe QD control device. More than 1011 Jones specific detectivity (estimated from the noise spectral density measured at 1 kHz) is achieved at room temperature, and the response time (measured at 22 mW cm−2 illumination intensity) of the device is less than 1.5 µs. That is comparable to commercial epitaxially grown IR photodetectors operated in the same wavelength range.

中文翻译:

溶液处理混合聚合物:HgTe 量子点光电晶体管,在室温下具有高灵敏度和高达 2400 nm 的快速红外响应。

基于窄带隙半导体的光电探测器经常遭受高室温噪声的影响,因此需要在低温下运行。在此,报道了一种混合聚(3-己基噻吩)(P3HT):HgTe量子点(QD)光电晶体管,它在室温下表现出高灵敏度和高达2400 nm波长范围的快速光电检测。光电晶体管的有源层由分散在 P3HT 基质中的 HgTe QD 组成。傅里叶变换红外光谱证实,经过长时间的共混搅拌和配体交换过程后,P3HT 和 HgTe QD 之间的化学接枝得以实现。由于电荷传输转移到 P3HT 中以及混合物中 HgTe QD 表面陷阱的部分钝化,P3HT: HgTe QD 混合光电晶体管显示出显着改善的栅极电压调谐,响应速度提高了 15 倍,并且约为 80%与原始的 HgTe QD 控制装置相比,噪声水平降低。在室温下实现了超过10 11琼斯比探测率(根据在1 kHz下测量的噪声谱密度估计),并且该装置的响应时间(在22 mW cm -2照明强度下测量)小于1.5 µs。这与在相同波长范围内工作的商用外延生长红外光电探测器相当。
更新日期:2020-06-24
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