An evanescently coupled one-sided junction waveguide photodiode (EC-OSJ-WGPD) is proposed and investigated numerically. The one-sided junction photodiode has a simple structure, while the characteristics of high speed and high output power are maintained. The designed EC-OSJ-WGPD with an absorption layer thickness of 350 nm achieves a bandwidth of 44.5 GHz and responsivity of 0.98 A/W. Comprehensive analyses of the EC-OSJ-WGPD are presented including photogeneration rate, internal optical power distribution, energy band diagram, internal electric field, photocurrent, and 3-dB bandwidth.

中文翻译：

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InGaAs/InP 渐逝耦合单侧结波导光电二极管设计

提出了一种渐逝耦合的单侧结波导光电二极管 (EC-OSJ-WGPD) 并对其进行了数值研究。单面结型光电二极管结构简单，同时保持了高速、高输出功率的特点。设计的吸收层厚度为 350 nm 的 EC-OSJ-WGPD 实现了 44.5 GHz 的带宽和 0.98 A/W 的响应度。介绍了 EC-OSJ-WGPD 的综合分析，包括光生成率、内部光功率分布、能带图、内部电场、光电流和 3-dB 带宽。