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Magnetron Sputtered SnO2 Constituting Double Electron Transport Layers for Efficient PbS Quantum Dot Solar Cells
Solar RRL ( IF 6.0 ) Pub Date : 2020-05-17 , DOI: 10.1002/solr.202000218
Yong Li 1 , Fan Yang 1 , Yongjie Wang 1 , Guozheng Shi 1 , Yin Maung Maung 2 , Jianyu Yuan 1 , Shujuan Huang 3 , Wanli Ma 1
Affiliation  

Herein, for the first time, it is successfully demonstrated that radio frequency (RF) magnetron sputtered SnO2 can be a qualified alternative electron transport layer (ETL) for a high‐efficiency PbS quantum dot (QD) solar cell. The highest performing device using such a SnO2 ETL obtains an efficiency of 8.4%, which is comparable to the sol–gel ZnO‐based one (8.8%). The excellent performance mainly results from the improved current density, which is attributed to the superior properties of the SnO2 ETL, such as high electron mobility and excellent optical transmittance. However, it is also found that the sputtered SnO2‐based devices show smaller voltage and fill factor due to the unsatisfied surface morphology and energy level alignment. By combining a thin (around 10 nm) sol–gel ZnO film on top of a sputtered SnO2 film to form the double ETL, the best efficiency of 10.1% is obtained, which is the highest efficiency using SnO2 ETL in a PbS QD solar cell. The work not only provides a new avenue to improve the efficiency of PbS QD solar cells but also offers the possibility to use an industry compatible sputtering technique for PbS QD solar cells.

中文翻译:

磁控溅射SnO2构成双电子传输层,用于高效PbS量子点太阳能电池

本文首次成功地证明了射频(RF)磁控溅射SnO 2可以作为高效PbS量子点(QD)太阳能电池的合格替代电子传输层(ETL)。使用这种SnO 2 ETL的性能最高的设备可获得8.4%的效率,这与基于溶胶-凝胶ZnO的设备(8.8%)相当。优异的性能主要来自电流密度的提高,这归因于SnO 2 ETL的优异性能,例如高电子迁移率和出色的光学透射率。然而,还发现溅射的SnO 2由于不满意的表面形态和能级对齐,基于设备的设备显示出较小的电压和填充系数。通过在溅射的SnO 2膜的顶部结合一个薄的(约10 nm)溶胶-凝胶ZnO膜以形成双重ETL,可获得最高的10.1%的效率,这是在PbS QD中使用SnO 2 ETL的最高效率。太阳能电池。这项工作不仅为提高PbS QD太阳能电池的效率提供了新途径,而且为PbS QD太阳能电池使用行业兼容的溅射技术提供了可能性。
更新日期:2020-05-17
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