Abstract The IV-VI semiconducting compounds, a family of two-dimensional material with attractive optical and electrical properties, have received extensive attention in recent years. Here, we demonstrate that tin monoselenide (SnSe) can be utilized as a saturable absorber (SA) for erbium-doped fiber laser (EDFL). By sandwiching the film of polyvinyl alcohol (PVA) and SnSe between two fiber connectors and depositing the SnSe nanoparticles onto the side-polished fiber (SPF), two types of SnSe based SAs are fabricated. The nonlinear optical properties of these two SAs are investigated, the modulation depth of the SnSe-SPF and SnSe-PVA SAs are 19.5% and 16.8%, respectively. Stable soliton mode-locking operations with center wavelength of 1556.6 (1558.2) nm and pulse width of less than 2 ps are obtained in the EDFL based on SnSe-SPF (SnSe-PVA) SA. Furthermore, the experimental results confirm that the damage threshold of the SnSe-SPF SA is much higher than that of the SnSe-PVA SA. Numerous photonics devices may benefit from the nonlinear saturable absorption properties of SnSe, such as near-infrared pulsed lasers, modulators, and so on.

中文翻译：

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用于产生超短脉冲的基于单硒化锡的可饱和吸收体

摘要 IV-VI 半导体化合物是一类具有吸引人的光学和电学性能的二维材料，近年来受到广泛关注。在这里，我们证明了单硒化锡 (SnSe) 可用作掺铒光纤激光器 (EDFL) 的可饱和吸收体 (SA)。通过将聚乙烯醇 (PVA) 和 SnSe 薄膜夹在两个光纤连接器之间，并将 SnSe 纳米颗粒沉积到侧面抛光的光纤 (SPF) 上，制造了两种类型的基于 SnSe 的 SA。研究了这两种 SA 的非线性光学特性，SnSe-SPF 和 SnSe-PVA SA 的调制深度分别为 19.5% 和 16.8%。在基于 SnSe-SPF (SnSe-PVA) SA 的 EDFL 中获得了稳定的孤子锁模操作，中心波长为 1556.6 (1558.2) nm，脉冲宽度小于 2 ps。此外，实验结果证实 SnSe-SPF SA 的损伤阈值远高于 SnSe-PVA SA。许多光子器件可能受益于 SnSe 的非线性可饱和吸收特性，例如近红外脉冲激光器、调制器等。