The binding energy of a donor impurity in a wurtzite GaN/Al_xGa_1-xN core-shell nanowire is investigated by a variational method combined with a finite-difference algorithm. A semi-empirical formula is derived to express the temperature dependence of static dielectric constants for wurtzite structure. The temperature influence on impurity binding energy is actually not very prominent when considering the temperature modulations on electronic effective mass, energy band gap and static dielectric constant. The electron bounded to an interface impurity is more sensitive to temperature, size and composition fluctuations. The relationship between the critical radius, at which the binding energy reaches a maximum value, and impurity position is obtained.

通过变分方法结合有限差分算法研究纤锌矿型GaN / Al _x Ga ₁ - _x N核壳纳米线中施主杂质的结合能。得出了一个半经验公式来表示纤锌矿结构的静态介电常数与温度的关系。当考虑电子有效质量，能带隙和静态介电常数的温度调制时，温度对杂质结合能的影响实际上并不是很明显。结合在界面杂质上的电子对温度，尺寸和组成波动更敏感。获得结合能达到最大值的临界半径与杂质位置之间的关系。