Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric,Advanced Electronic Materials

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Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-05-08 , DOI: 10.1002/aelm.202000091
Hyun Bae Jeon _{1,

2} , Gwang Hyuk Shin _{1,

2} , Khang June Lee _{1,

2} , Sung‐Yool Choi _{1,

2}

Affiliation

A p‐type tunneling field‐effect transistor is demonstrated based on a van der Waals vertical heterostructure of WSe₂ and MoS₂, utilizing the ion gel dielectric as top gate. Band‐to‐band tunneling is achieved by modulating the band alignment of the heterojunction of WSe₂ and MoS₂ with gating the WSe₂ channel through ion gel top gate. A fabricated tunneling field‐effect transistor shows a minimum subthreshold swing of 36 mV dec⁻¹ and ON/OFF current ratio of 10⁶ at room temperature. Furthermore, evidence of band‐to‐band tunneling is clearly confirmed through temperature dependent I–V characteristics. This work holds considerable promise for the low‐power computational devices based on integrated circuits.

中文翻译：

基于WSe2-MoS2异质结构和离子凝胶电介质的垂直隧穿场效应晶体管

基于WSe ₂和MoS _2的范德华斯垂直异质结构，利用离子凝胶电介质作为顶栅，展示了一种p型隧穿场效应晶体管。通过调节WSe ₂和MoS ₂异质结的能带对准，并通过离子凝胶顶栅选通WSe ₂通道，可以实现带间隧穿。制成的隧穿场效应晶体管在室温下的最小亚阈值摆幅为36 mV dec ^-1，开/关电流比为10 ⁶。此外，通过温度相关的IV可以明显地证实带间隧穿的证据特征。这项工作对于基于集成电路的低功耗计算设备具有很大的希望。

更新日期：2020-07-13

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