This work explores the temperature associated reliability issues of selective buried oxide (SELBOX) TFET. The proposed device is optimized for maximum I_ON/I_OFF ratio considering various gap positions in the buried oxide. The variation of DC parameters such as I_D‐V_GS characteristics, subthreshold swing (SS) and I_ON/I_OFF ratio for a wide range of temperature from 300 K to 500 K has been studied. The proposed SELBOX device is compared with conventional silicon‐on‐insulator device considering various RF parameters. Moreover, the dependency of RF performance of the proposed device on temperature has been examined. The variation of RF parameters such as transconductance (g_m), cut‐off frequency (f_T), gate capacitance (C_GG), intrinsic delay and transconductance frequency product (TFP) with temperature has also been studied. The linearity of the device has been explored by analyzing the influence of temperature variation on 1‐dB compression point. Further, temperature dependency in the presence of quantum correction (QC) model has been analyzed.

中文翻译：

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陷阱存在下选择性掩埋氧化物TFET中温度的影响及其RF分析

这项工作探讨了选择性掩埋氧化物（SELBOX）TFET与温度相关的可靠性问题。考虑到掩埋氧化物中的各种间隙位置，建议的器件针对最大I _ON / I _OFF比进行了优化。研究了DC参数的变化，例如I _D -V _GS特性，亚阈值摆幅（SS）和I _ON / I _OFF比在300 K至500 K的宽温度范围内。考虑到各种RF参数，将拟议的SELBOX器件与传统的绝缘体上硅器件进行了比较。此外，已经检查了所提出的装置的RF性能对温度的依赖性。射频参数的变化，例如跨导（g _m），还研究了截止频率（f _T），栅极电容（C _GG），固有延迟和跨导频率乘积（TFP）与温度的关系。通过分析温度变化对1dB压缩点的影响来探索设备的线性度。此外，已经分析了存在量子校正（QC）模型时的温度依赖性。