Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures,Physica Status Solidi (B) - Basic Solid State Physics

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Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-05-08 , DOI: 10.1002/pssb.202000097
Sahar Jafari _{1,

2} , Jonathan Steffens ₃ , Michael Wendt ₁ , Barbara Terheiden ₃ , Sylke Meyer ₁ , Dominik Lausch _{1,

4}

Affiliation

The amount of hydrogen released from plasma‐enhanced chemical vapor (PECVD) deposited hydrogenated amorphous silicon (a‐Si:H) layers is determined by gas effusion measurements. A sharp peak (SP) is observed in the effusion spectra of samples with substrate temperature T_S ≥ 200 °C. Light microscopic images indicate the formation of bubbles after deposition for all samples and film deterioration after effusion measurement in correlation with the presence of the hydrogen SPs. Change in substrate temperature varies with the microstructure of the film, the hydrogen concentration, and the density. A low T_S leads to a porous structure with large number of interface bubbles, and therefore no hydrogen‐induced SP appears during hydrogen effusion. Whereas high T_S causes a compact a‐Si:H film in which the hydrogen effusion is limited by the longer diffusion, while the number of interface bubbles decreases. The storage of near substrate hydrogen in the bubbles in compact material leads to a local explosion by increase in excessive pressure. The difference between the low temperature peak and the position of the SP in the effusion spectra indicates the time required to fill the interface bubbles with hydrogen, which decreases with increasing film density, suggesting that the volume of the interface bubble decreases.

中文翻译：

氢化非晶硅膜氢尖峰的发生及其与空隙结构的关系

从等离子体增强化学气相沉积（PECVD）沉积的氢化非晶硅（a-Si：H）层释放的氢气量由气体渗出测量确定。的尖峰（SP）在样品的积液光谱中观察到与基片温度Ť_小号 ≥200℃。光学显微图像表明所有样品沉积后气泡的形成，以及与氢SPs的存在相关的渗出测量后膜的劣化。基板温度的变化随薄膜的微观结构，氢浓度和密度而变化。低T _S导致具有大量界面气泡的多孔结构，因此在氢渗出过程中没有氢诱导的SP出现。而高T _S形成致密的a-Si：H膜，其中氢的扩散受较长扩散的限制，而界面气泡的数量减少。紧密材料中气泡中近衬底氢的存储会由于过大压力的增加而导致局部爆炸。低温峰与渗出光谱中SP的位置之间的差异表明，用氢填充界面气泡所需的时间随氢气密度的增加而减少，这表明界面气泡的体积减少了。

更新日期：2020-05-08

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