Abstract

Present study endeavors to analyze the role of Gaussian white noise and fluctuating confinement potential on time-average excitation rate (TAER) of impurity doped quantum dot (QD). The TAER profiles are exhaustively monitored as a number of physical quantities are varied over a range with and without noise. Application of noise to the system takes place in two different pathways known as ‘additive’ and ‘multiplicative’. And the fluctuation of the confinement potential has been considered to be cosinusoidal and random which induces the excitation of ground state electronic population to the higher states. The TAER profiles comprise of features like steady increase/decrease, maximization, minimization and saturation. However, the specific characteristics of a particular profile depend on presence/absence of noise, the noise mode, the nature of fluctuating confinement potential and the identity of the physical quantity being varied. Production of large TAER of doped QD depends on noise-mode and nature of fluctuating confinement potential based on which the noise strength is required to be maintained in the vicinity of some typical values.

Graphical abstract

中文翻译：

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随时间变化的限制势下杂质掺杂量子点的跃迁动力学：噪声的作用

摘要

目前的研究试图分析高斯白噪声和波动限制势对杂质掺杂量子点（QD）的时间平均激发速率（TAER）的作用。由于在一定范围内有无噪声的情况下，大量物理量会发生变化，因此会全面监控TAER曲线。将噪声应用到系统的过程有两种不同的途径，即“加性”和“乘性”。而且，限制电位的波动被认为是余弦波和随机的，这引起了基态电子种群向更高态的激发。TAER配置文件包括稳定增加/减少，最大化，最小化和饱和度等特征。但是，特定配置文件的特定特征取决于是否存在噪音，噪音模式，限制电位波动的性质以及物理量的标识正在变化。掺杂QD的大TAER的产生取决于噪声模式和波动限制电位的性质，基于该性质，要求将噪声强度保持在一些典型值附近。

图形概要