Investigation of the peculiarities of photoluminescence in different gas ambients of Si- and Ge-doped ZnO nanopowders was carried out. Nanopowders were obtained and doped by means of pulsed laser reactive technology. X-ray diffractometry, scanning, and transmission electron microscopy were conducted to determine the structure, shape, and size of the nanoparticles. Changing the gas environment leads to a significant change in the intensity of the photoluminescence spectra and its deformation; this is a result of the redistribution of existing luminescence centers and the emergence of additional luminescence centers caused by the adsorption on the nanopowders surface. The decomposition of luminescence spectra into elementary bands shows the presence of four elementary peaks at 430, 480, 515, and 555 nm. The influence of the impurity and the gas medium on the redistribution of elementary luminescence band intensities was investigated. The investigated nanopowders can be effectively used as sensitive materials for the construction of gas sensor systems.

对掺Si和掺Ge的ZnO纳米粉在不同气体环境下的光致发光特性进行了研究。获得纳米粉末，并通过脉冲激光反应技术对其进行掺杂。进行了X射线衍射，扫描和透射电子显微镜以确定纳米颗粒的结构，形状和尺寸。改变气体环境会导致光致发光光谱强度及其变形发生重大变化；这是由于现有发光中心的重新分布以及由纳米粉体表面的吸附引起的其他发光中心的出现所致。发光光谱分解成基本能带显示在430、480、515和555 nm处存在四个基本峰。研究了杂质和气体介质对基本发光带强度的重新分布的影响。研究的纳米粉可以有效地用作敏感材料，用于构建气体传感器系统。