Integration of yttrium iron garnet (YIG) with Si can bring new avenues for garnet-based complementary metal-oxide semiconductor compatible devices. Herein, investigations on the morphological, electrical, and magnetic properties of postgrowth annealed YIG thin films grown on Si substrate were systematically performed at nanoscale lateral resolution, employing the variants of atomic force microscopy (AFM) viz., conductive AFM (C-AFM), kelvin probe force microscopy, and magnetic force microscopy (MFM). Scanning electron microscopy analysis has revealed the formation of three different regions with varied crystallinity defined as center, dark, and surrounding matrix. Interestingly, AFM topography has not shown any surface variation of the obtained three different regions. Despite no variation in their surface topography, notable changes occur in their local conductivity, surface potential, and microstructure of their magnetic domains. C-AFM studies have shown the formation of conducting channels with three different resistivity regions. The tunneling current was enhanced nearly 50 times from the dark region (∼1 pA) to the center region (∼50 pA). MFM image analysis reveals the formation of two different magnetically active domains in the form of circles (–0.3°) distributed in a surrounding matrix (+0.3°) with a steep change in their magnetic phase degree. The formation of circular magnetic domains with highly distinguishable regions has suggested the potential of YIG/Si films for magnetic memory application. This work has shed light on the prospective of YIG/Si films for resistive and magnetic memory applications and fundamental aspects of growth of YIG on nongarnet substrates.

中文翻译：

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通过脉冲激光沉积生长的 YIG/Si (100) 薄膜的磁性和电学特性的纳米级探测

钇铁石榴石 (YIG) 与 Si 的集成可为基于石榴石的互补金属氧化物半导体兼容器件带来新的途径。在此，使用原子力显微镜 (AFM) 即导电 AFM (C-AFM) 的变体，以纳米级横向分辨率系统地研究了在 Si 衬底上生长的后生长退火 YIG 薄膜的形态、电学和磁学性质、开尔文探针力显微镜和磁力显微镜 (MFM)。扫描电子显微镜分析揭示了三个不同区域的形成，这些区域具有不同的结晶度，定义为中心、暗和周围基质。有趣的是，AFM 地形没有显示所获得的三个不同区域的任何表面变化。尽管它们的表面地形没有变化，它们的局部电导率、表面电位和磁畴的微观结构发生了显着变化。C-AFM 研究显示了具有三个不同电阻率区域的导电通道的形成。从暗区（~1 pA）到中心区域（~50 pA），隧道电流增强了近 50 倍。MFM 图像分析揭示了以圆形 (–0.3°) 形式分布在周围基质 (+0.3°) 中的两个不同磁活性域的形成，其磁相度发生了急剧变化。具有高度可区分区域的圆形磁畴的形成表明 YIG/Si 薄膜在磁存储器应用中的潜力。