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Direct Chip-to-Waveguide Transition Realized with Wire Bonding for 140 GHz to 220 GHz G-Band
IEEE Transactions on Terahertz Science and Technology ( IF 3.9 ) Pub Date : 2020-05-01 , DOI: 10.1109/tthz.2020.2971690
Paul Starke , Corrado Carta , Frank Ellinger

This work presents a method to realize a direct chip-to-waveguide transition by means of commercial wire-bonding tools. A straight E-field probe is formed by a freely suspended bondwire and mounted to a standard RF pad on-chip. In contrast to conventional approaches, no additional dedicated substrate or large integrated radiating structure are necessary. A preliminary analysis is performed to illustrate the basic feasibility and a WR-05 prototype module, with dedicated test chip, is designed and optimized for a frequency range of 140–220 GHz (G-Band). The measured return loss of a back-to-back configuration is above 10 dB, while the deembedded absolute loss of a single transition is between 0.4 and 1 dB, both within the complete waveguide bandwidth of 80 GHz. The demonstrated performance is very well suited to ultrawideband communication systems or general-purpose mm-wave components.

中文翻译:

通过引线键合实现 140 GHz 至 220 GHz G 波段的直接芯片到波导转换

这项工作提出了一种通过商用引线键合工具实现直接芯片到波导过渡的方法。直线电场探头由自由悬挂的焊线形成,并安装到片上标准 RF 焊盘上。与传统方法相比,不需要额外的专用基板或大型集成辐射结构。进行了初步分析以说明基本可行性,并针对 140–220 GHz(G 波段)的频率范围设计和优化了带有专用测试芯片的 WR-05 原型模块。测得的背对背配置的回波损耗高于 10 dB,而单次转换的去嵌入绝对损耗介于 0.4 到 1 dB 之间,均在 80 GHz 的完整波导带宽内。
更新日期:2020-05-01
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