In this study, we investigate low frequency noise under the reverse body bias conditions from sub-threshold to moderate inversion regime, in order to experimentally extract the impact of depletion capacitance with the reverse body bias. From 1/ ${f}$ noise measurement for small-area conventional ${n}$ MOSFETs, the reverse body bias is not influenced on the coulomb scattering process, even though the depletion capacitance was influenced by body bias. Furthermore, small gate-to-bulk coupling with smaller depletion capacitance caused by reverse body bias reduced Random Telegraph Noise as well as flat-band fluctuations of gate voltage noise spectral density. These results suggest that reverse body bias is applicable to the low power and high signal-to-noise ratio for low current operation.

中文翻译：

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耗尽电容对具有反向体偏置的亚微米 nMOSFET 低频噪声影响的实验提取

在这项研究中，我们研究了从亚阈值到中等反转状态的反向体偏置条件下的低频噪声，以便通过实验提取耗尽电容对反向体偏置的影响。从 1/ ${f}$ 小面积常规噪声测量 ${n}$ 在 MOSFET 中，反向体偏置不会影响库仑散射过程，即使耗尽电容受到体偏置的影响。此外，由反向体偏置引起的具有较小耗尽电容的小栅-体耦合降低了随机电报噪声以及栅电压噪声谱密度的平带波动。这些结果表明反向体偏置适用于低功率和高信噪比的低电流操作。