In this paper, we propose a new statistical model parameter extraction method for compact power device models. While existing parameter extraction methods are only applicable for the parameters that follow normal distributions, the proposed method can simultaneously incorporate the model parameters that follow lognormal distributions. In addition, a set of dominant model parameters, which largely contributes to the characteristic variation of power MOSFETs, has been studied on the basis of the proposed statistical parameter modeling. Through the numerical analysis upon measured drain currents of planar and trench SiC power MOSFETs, we demonstrate that the fluctuation of the current characteristics can be represented by a small number of dominant parameters. In our example, threshold voltage and current scaling factor are identified to be particularly important to approximate the fluctuation of the current characteristics in both structures.

中文翻译：

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功率 MOSFET 正态分布和对数正态分布模型参数的统计提取

在本文中，我们提出了一种新的紧凑型功率器件模型统计模型参数提取方法。虽然现有的参数提取方法仅适用于服从正态分布的参数，但所提出的方法可以同时合并服从对数正态分布的模型参数。此外，在提出的统计参数建模的基础上，研究了一组主要影响功率 MOSFET 特性变化的主要模型参数。通过对平面和沟槽 SiC 功率 MOSFET 的测量漏极电流的数值分析，我们证明了电流特性的波动可以由少数主导参数表示。在我们的例子中，