This paper reports on the performance changes in CdTe:Cl semiconductor X-ray detectors seen after irradiation with 50 MeV protons up to a fluence of 1.6$\cdot$10¹¹cm⁻². The rationale for the irradiation parameters is described. Performance was quantified before and after irradiations by obtaining X-ray spectra with a barium-133 radioactive source and detectors cooled to −20°C. Energy resolutions, electron and hole drift lengths, and energy calibration parameters were extracted by fitting model spectra to the data. Ten crystals of dimension 10$\times$10$\times$1 mm³ were used, with two each being irradiated to 20%, 40%, 60%, 80%, and 100% of the maximum fluence. Each crystal is pixelized and the eight large pixels of area 9.6 mm² are analysed separately to allow estimation of uncertainties.

The main observations are a strong decrease of the electron drift length and an increase of the electronic noise with fluence. The hole drift length shows a tendency to increase with fluence. A basic interpretation of some observations in terms of an increasing density of acceptor trap levels with fluence is given.

本文报道了用50 MeV质子辐照至1.6的注量辐照后CdTe：Cl半导体X射线探测器的性能变化$\cdot$10 ¹¹厘米^-2。描述了照射参数的原理。通过使用钡133放射源和冷却至-20°C的检测器获得X射线光谱来量化辐照前后的性能。通过将模型光谱拟合到数据中来提取能量分辨率，电子和空穴漂移长度以及能量校准参数。十个尺寸为10的晶体$\times$10$\times$使用1 mm ^3，分别以最大通量的20％，40％，60％，80％和100％照射两个。每个晶体都被像素化，分别分析面积为9.6 mm ²的八个大像素，以估计不确定性。

主要观察结果是电子漂移长度的强烈减小和电子能量随通量的增加。空穴漂移长度显示出随着通量增加的趋势。给出了一些观察结果的基本解释，即随着通量的增加，受体陷阱水平的密度增加。