Abstract In this paper, vertically aligned GaN@Ga2O3 core-shell heterostructured nanowire arrays have been fabricated by thermal oxidation of GaN nanowire arrays. GaN nanowire arrays have been prepared by inductively coupled plasma etching. The GaN@Ga2O3 nanowire arrays have the good morphology and the thickness of the Ga2O3 shell can be controlled by the oxidation duration and temperature. The photocatalytic activity of vertically aligned GaN@Ga2O3 nanowires has been first evaluated by the degradation of Rhodamine B solution. Compared with the original GaN nanowires and the oxidized Ga2O3 nanowires, GaN@Ga2O3 nanowires exhibit superior photocatalytic activity. This finding suggests that GaN nanowire arrays with enhanced photocatalytic activity could be obtained by construct heterostructured GaN-based nanocomposite, which provides a new possibility for photocatalytic applications.

中文翻译：

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垂直排列的GaN@Ga2O3核壳异质结构纳米线阵列的制备及其降解罗丹明B的光催化活性

摘要 本文通过GaN纳米线阵列的热氧化制备了垂直排列的GaN@Ga2O3核壳异质结构纳米线阵列。GaN 纳米线阵列已经通过电感耦合等离子体蚀刻制备。GaN@Ga2O3纳米线阵列具有良好的形貌，Ga2O3壳层的厚度可以通过氧化持续时间和温度来控制。垂直排列的 GaN@Ga2O3 纳米线的光催化活性首先通过罗丹明 B 溶液的降解来评估。与原始的 GaN 纳米线和氧化的 Ga2O3 纳米线相比，GaN@Ga2O3 纳米线表现出优异的光催化活性。这一发现表明，通过构建异质结构的 GaN 基纳米复合材料，可以获得具有增强光催化活性的 GaN 纳米线阵列，