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Effect of Radio Frequency Power on Nano-metal induced Self-masking Subwavelength Structures Mechanism
Results in Physics ( IF 4.4 ) Pub Date : 2020-05-07 , DOI: 10.1016/j.rinp.2020.103155
Xiheng Hu , Xin Ye , Jingjun Wu , Shanjun Chen , Yan Chen , Jin Huang , Liming Yang , Wanguo Zheng

Randomly subwavelength structures (SWSs) were fabricated by reactive ion etching (RIE) process on the fused silica substrate, on the basis of an advanced metal nanodot induced one-step self-masking technology. Metal fluoride nanodots induce the deposition of fluorocarbon polymer stably. It acts as micromasks during the RIE process. With an increase in radio frequency (RF) power, the average sample height increases, the aspect ratio of the structure becomes greater and more uniform, and the average optical transmittance increases. Moreover, the maximum transmittance for single-sided SWSs can reach 95.5%. The theoretical simulation is in good agreement with the experiment results. The calculated results indicate that the profile of prepared structures may be close to a cylinder profile.



中文翻译:

射频功率对纳米金属诱导的自掩蔽亚波长结构机理的影响

在先进的金属纳米点诱导一步自动掩膜技术的基础上,通过反应离子刻蚀(RIE)工艺在熔融石英衬底上制备了随机亚波长结构(SWS)。金属氟化物纳米点稳定地诱导碳氟聚合物的沉积。它在RIE过程中充当微掩膜。随着射频(RF)功率的增加,平均样本高度增加,结构的纵横比变得更大且更均匀,并且平均光学透射率增加。而且,单面SWS的最大透射率可以达到95.5%。理论仿真与实验结果吻合良好。计算结果表明,所制备结构的轮廓可能接近圆柱轮廓。

更新日期:2020-05-07
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