We present a mathematical model and a tool chain for the numerical simulation of TEM images of semiconductor quantum dots (QDs). This includes elasticity theory to obtain the strain profile coupled with the Darwin–Howie–Whelan equations, describing the propagation of the electron wave through the sample. We perform a simulation study on indium gallium arsenide QDs with different shapes and compare the resulting TEM images to experimental ones. This tool chain can be applied to generate a database of simulated TEM images, which is a key element of a novel concept for model-based geometry reconstruction of semiconductor QDs, involving machine learning techniques.

中文翻译：

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各种形状的 In(Ga)As/GaAs 量子点的 TEM 图像数值模拟

我们提出了一个数学模型和一个工具链，用于对半导体量子点 (QD) 的 TEM 图像进行数值模拟。这包括获得应变分布的弹性理论以及 Darwin-Howie-Whelan 方程，描述了电子波在样品中的传播。我们对不同形状的铟镓砷量子点进行了模拟研究，并将得到的 TEM 图像与实验图像进行了比较。该工具链可用于生成模拟 TEM 图像数据库，这是基于模型的半导体 QD 几何重建新概念的关键要素，涉及机器学习技术。