The performance of TFET is limited by low ON state tunnel current. This paper introduces a novel p-channel tunnel field effect transistor (TFET) which incorporates a hetero-structure channel layer made of Si/intrinsic—SiGe. Also, tensile strained Si_1−xGe_x p-type channel is used which enhances the device characteristics, where x is the Ge-mole fraction. The proposed structure exhibits a very small subthreshold swing and a high ON–OFF current ratio. The device characteristics are improved on the basis of theoretical principles and simulation results. The structure is improvised to achieve higher values for ON-current as compared to previously reported structures in literature. The average value of subthreshold swing and I_ON-current are found to be 59 mV/dec and 10⁻⁵ A/µm.

TFET的性能受到低导通状态隧道电流的限制。本文介绍了一种新型的p沟道隧道场效应晶体管（TFET），该晶体管结合了由Si /本征SiGe构成的异质结构沟道层。同样，使用拉伸应变的Si ₁ - _x Ge _x p型沟道来增强器件特性，其中x是Ge摩尔分数。所提出的结构具有非常小的亚阈值摆幅和高ON-OFF电流比。在理论原理和仿真结果的基础上改善了器件的特性。与文献中先前报道的结构相比，该结构被改进以实现更高的导通电流值。亚阈值摆幅和I _ON的平均值-电流为59 mV / dec和10 ^-5  A /μm。