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A substitution method for nanoscale capacitance calibration using scanning microwave microscopy
Measurement Science and Technology ( IF 2.7 ) Pub Date : 2020-05-04 , DOI: 10.1088/1361-6501/ab82c1
José A Morán-Meza , Alexandra Delvallée , Djamel Allal , François Piquemal

This paper presents a calibration method and an uncertainty budget for capacitance measurements performed on micrometric size capacitors at microwave frequencies and nanometric resolution using a scanning microwave microscopy (SMM). The method applies the classical one-port vector network analyzer calibration for SMM using three known capacitance standards. These standards are established from a commercial calibration kit placed close to the microcapacitors in order to be calibrated. The calibration kit is composed of a large number of Metal-Oxide-Semiconductor (MOS) microcapacitors with capacitance values C ranging from 0.1 fF to 8.6 fF. Diligent selection criteria were established for the choice of the three capacitors. Their capacitance values were calculated from the AFM measured values of the area of the top electrodes and the dielectric thickness and considering the contribution of fringing fields. The combined type uncertainty on these calculated values amounts bet...

中文翻译:

一种使用扫描微波显微镜进行纳米级电容校准的替代方法

本文介绍了一种校准方法和不确定性预算,用于使用微波扫描显微镜(SMM)在微波频率和纳米分辨率下对微米级电容器进行电容测量。该方法使用三个已知电容标准对SMM应用经典的单端口矢量网络分析仪校准。这些标准是通过将商业校准套件放置在微电容器附近来进行校准的。校准套件由大量的金属氧化物半导体(MOS)微电容器组成,其电容值C在0.1 fF至8.6 fF的范围内。为选择三个电容器建立了严格的选择标准。根据顶部电极的面积和介电层厚度的AFM测量值并考虑边缘场的影响,计算出它们的电容值。这些计算值的组合类型不确定性在...
更新日期:2020-05-04
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