Abstract This study is devoted to the technology and optimization of pulsed-DC reactive magnetron sputtering of hafnium oxynitride (HfOxNy) thin-films. The fabrication process of HfOxNy films was optimized employing the Taguchi orthogonal tables approach leading to the material with possible best electrical parameters. During the optimization procedure, the parameters of dielectric films were monitored by means of electrical characterization of MIS structures with hafnium oxynitride as the gate-dielectric. The thermal stability of fabricated HfOxNy layers was also examined. The presented results have shown the improved electrical parameters of fabricated films after thermal treatment. Namely, we have observed beneficial flat-band voltage (Vfb) value, the disappearance of frequency dispersion of C V characteristics, reduced effective charge (Qeff/q), and interface traps (Dit) densities of examined MIS structures. However, the permittivity value is slightly lower as compared to reference samples. The superior stability of HfOxNy layers up to 800 °C was proved. Although the significant increase of crystalline phase in the layer bulk was observed, no deterioration of electrical properties or surface morphology has been noticed. The results presented in this study make the investigated HfOxNy fabricated using pulsed-DC reactive magnetron sputtering the possible candidate as a gate dielectric in MIS structures and devices.

中文翻译：

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MIS器件用脉冲-直流反应磁控溅射形成氮氧化铪（HfOxNy）薄膜的技术与优化

摘要 本研究致力于氧氮化铪（HfOxNy）薄膜的脉冲直流反应磁控溅射技术和优化。采用田口正交表方法优化了 HfOxNy 薄膜的制造工艺，从而使材料具有可能的最佳电参数。在优化过程中，通过使用氮氧化铪作为栅极电介质的 MIS 结构的电气特性来监测电介质膜的参数。还检查了制造的 HfOxNy 层的热稳定性。所呈现的结果表明，热处理后制造的薄膜的电参数得到改善。即，我们观察到有益的平带电压 (Vfb) 值，CV 特性的频率色散消失，降低有效电荷 (Qeff/q) 和检查的 MIS 结构的界面陷阱 (Dit) 密度。然而，与参考样品相比，介电常数值略低。证明了 HfOxNy 层在高达 800 °C 时的卓越稳定性。虽然观察到层体中结晶相的显着增加，但没有注意到电性能或表面形态的恶化。本研究中提出的结果使使用脉冲直流反应磁控溅射制造的研究 HfOxNy 成为可能的候选材料，作为 MIS 结构和器件中的栅极电介质。虽然观察到层体中结晶相的显着增加，但没有注意到电性能或表面形态的恶化。本研究中提出的结果使使用脉冲直流反应磁控溅射制造的研究 HfOxNy 成为可能的候选材料，作为 MIS 结构和器件中的栅极电介质。虽然观察到层体中结晶相的显着增加，但没有注意到电性能或表面形态的恶化。本研究中提出的结果使使用脉冲直流反应磁控溅射制造的研究 HfOxNy 成为可能的候选材料，作为 MIS 结构和器件中的栅极电介质。