This paper reports a SnS$_2$ nanoflakes based UV photodetector having high sensitivity and thermal stability upto 120 $^{\circ}$C. Simple and low cost solvothermal technique has been used to synthesize SnS$_2$ nanoflakes of close to hexagonal shapes. A simple photoconductor structure on SiO$_{2}$/Si substrate is fabricated by using Ag as contact material. The resultant device has good sensitivity ($\sim$400), responsivity ($\sim$5.5 A/W), EQE ($\sim$1868%), detectivity (${\sim} \text{1.72}\times \text{10}^{13}$ Jones) and low response time ($\sim$2.2 s). The reported characteristics are superior to many other UV photodetectors utilizing complex hybrid structure of the device, either in form of additional filter layer or nanostructural light sensitive material.

中文翻译：

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基于 2D-SnS$_2$ 纳米薄片的高效紫外光电探测器

本文报道了一个 SnS$_2$ 基于纳米薄片的紫外光电探测器，具有高达 120 的高灵敏度和热稳定性 $^{\circ}$C. 简单且低成本的溶剂热技术已被用于合成 SnS$_2$接近六边形的纳米薄片。SiO 上的简单光电导体结构$_{2}$/Si衬底是通过使用Ag作为接触材料来制造的。所得装置具有良好的灵敏度（$\sim$400），响应度（$\sim$5.5 A/W), EQE ($\sim$1868%), 探测率 (${\sim} \text{1.72}\times \text{10}^{13}$ 琼斯）和低响应时间（$\sim$2.2 秒）。报告的特性优于许多其他利用器件复杂混合结构的紫外光电探测器，无论是附加过滤层或纳米结构光敏材料的形式。