Graphene-based micro-tubes (μ-GTs) with good tubular structure were successfully fabricated from commercial graphene oxide dispersion by the electrospray deposition technique and thermal reduction. As a result of the structural changes, the electrical conductivity of the μ-GTs clearly increased as the annealing temperature increased. In particular, the μ-GTs with lower annealing temperatures exhibited distinct semiconductor properties. The electrical conduction mechanism can be explained by the 2-D variable-range hopping model. Furthermore, a transition from semiconductor to semi-metal was found to occur when the annealing temperature exceeded 900 °C, and the electrical conduction mechanism follows the exponential law of temperature in this condition.

利用电喷雾沉积技术和热还原技术成功地从商业化的氧化石墨烯分散体中成功地制成了具有良好管状结构的石墨烯基微管（μ-GTs）。作为结构变化的结果，μ-GT的电导率随着退火温度的升高而明显增加。特别地，具有较低退火温度的μ-GT表现出独特的半导体性质。导电机理可以通过二维可变范围跳跃模型来解释。另外，当退火温度超过900℃时，发现发生从半导体到半金属的转变，并且在该条件下导电机理遵循温度的指数规律。