Aluminum nitride (AlN) and aluminum oxide (Al₂O₃) were exposed to deuterium (D) and helium (He) plasma in the PISCES-A linear plasma device using RF biasing of the sample manipulator to set the incident ion energy (16–100 eV, 0.7–12 × 10²⁵ m⁻², <600 K). Preferential sputtering of nitrogen was detected for D and He exposed AlN samples, resulting in Al enrichment at the surface (i.e., Al/N ~2–3). The Al-enriched region was limited to the uppermost ~20 nm, independent of fluence, and was eliminated by exposure to plasma seeded with nitrogen. No Al enrichment was observed for the Al₂O₃ samples exposed to pure D or He. Results suggest AlN and Al₂O₃ are promising candidates as plasma facing materials in magnetic fusion and RF plasma devices (e.g., as electrical standoffs and RF heating windows).

在PISCES-A线性等离子体装置中，使用样品操纵器的RF偏压将氮化铝（AlN）和氧化铝（Al ₂ O ₃）暴露于氘（D）和氦（He）等离子体中，以设置入射离子能量（16 –100 eV，0.7–12×10 ²⁵ m ^-2，<600 K）。在D和He暴露的AlN样品中检测到氮的优先溅射，导致表面Al富集（即Al / N〜2-3）。铝的富集区域限制在最上端〜20 nm，与能量密度无关，并且通过暴露于用氮气播种的等离子体消除。对于暴露于纯D或He的Al ₂ O ₃样品，未观察到Al富集。结果表明AlN和Al ₂ O ₃ 在磁聚变和RF等离子设备（例如，电支架和RF加热窗口）中作为面向等离子体的材料是有希望的候选者。