This paper elaborates theoretically the strain and electric field effects on the electronic density of states (DOS) and electronic heat capacity (EHC) of the topological crystalline insulator SnTe (0 0 1) and related alloys. We employ Green’s function calculations for DOS and the Boltzmann approach for EHC. Schottky anomalies are found in EHC based on the entropy analysis. Strain- and electric field-induced DOS indicates the band gap opening in the system. Relative trends with respect to the strain modulus (electric field strength) show an increasing (a fluctuating) trend for the Schottky temperature. The results may lead to wide-ranging applications in thermoelectrics and tunable topological electronics/spintronics.

本文从理论上阐述了应变和电场对拓扑晶体绝缘子SnTe（0 0 1）和相关合金的电子态密度（DOS）和电子热容（EHC）的影响。对于DOS，我们使用Green的函数计算；对于EHC，我们采用Boltzmann方法。根据熵分析，在EHC中发现了肖特基异常。应变和电场感应的DOS指示系统中的带隙开口。相对于应变模量（电场强度）的相对趋势显示出肖特基温度的增加（波动）趋势。结果可能导致在热电和可调拓扑电子/自旋电子学中的广泛应用。