In this work, we optimized the performance of a gallium nitride (GaN)-based n/p junction betavoltaic cell irradiated by the radioisotope nickel-63 (${Ni}^{63}$). In particular, we developed a lab-made software starting from an analytical model that takes into account a set of fundamental physical parameters for the cell structure. The simulations reveal that, by using a ${Ni}^{63}$ radioisotope source with a 25 mCi/cm${}^2$ activity density emitting a flux of beta-particles with an average energy of 17.1 KeV, the cell performs a conversion efficiency ($\eta$) in excess of 26%, thus approaching the theoretical limit for a GaN-based device. The other electrical parameters of the cell, namely the short-circuit current density ($J_{sc}$), open-circuit voltage ($V_{oc}$), and maximum electrical power density ($P_{max}$) are $240nA∕c{m}^2$, 2.87 V, and $660nW∕c{m}^2$, respectively. The presented analysis can turn useful for understanding the theoretical background needed to better face GaN-based betavoltaic cell design problems.

在这项工作中，我们优化了放射性同位素Nickel-63（GaN）辐照的基于氮化镓（GaN）的n / p结betavoltaic电池的性能${ñ\mathrm{一世}}^{63}$）。特别是，我们从分析模型开始开发了实验室制造的软件，该分析模型考虑了细胞结构的一组基本物理参数。模拟显示，通过使用${ñ\mathrm{一世}}^{63}$ 25 mCi / cm的放射性同位素源${}^2$ 通过发射平均能量为17.1 KeV的β粒子通量的活度密度，该电池执行了转化效率（$\eta$）超过26％，从而接近GaN基器件的理论极限。电池的其他电参数，即短路电流密度（${Ĵ}_{sC}$）， 开路电压 （$V_{ØC}$）和最大电功率密度（$P_{米\mathrm{一种}X}$） 是 $240ñ\mathrm{一种}∕C{米}^2$，2.87 V和 $660ñ\mathrm{w\; ^}∕C{米}^2$， 分别。提出的分析对于理解更好地解决基于GaN的β伏打电池设计问题所需的理论背景很有帮助。