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Memristive Device Characteristics Engineering by Controlling the Crystallinity of Switching Layer Materials
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-05-04 , DOI: 10.1021/acsaelm.0c00148
Hao Yang 1 , Buyun Chen 1 , Boxiang Song 1 , Deming Meng 1 , Subodh Tiwari 2 , Aravind Krishnamoorthy 2 , Xiaodong Yan 1 , Zerui Liu 1 , Yunxiang Wang 1 , Pan Hu 1 , Tse-Hsien Ou 1 , Paulo Branicio 2 , Rajiv Kalia 2 , Aiichiro Nakano 2 , Priya Vashishta 2 , Fanxin Liu 3 , Han Wang 1 , Wei Wu 1
Affiliation  

Memristive devices (i.e., memristors) can be highly beneficial in many emerging applications that may play important roles in the future generations of electronic systems, such as bio-inspired neuromorphic computing, high density nonvolatile memory, and field programmable gate arrays. Therefore, the memristor characteristics (such as operation voltage, on/off ratio, and the number of conductance states) must be engineered carefully for different applications. Here, we demonstrate a method to modify the memristor characteristics specifically by controlling the crystallinity of the switching layer material. Through setting the temperature of atomic layer deposition, the crystallinity of deposited Al2O3 can be controlled. Using different crystalline Al2O3 as the memristor switching layer, the characteristics of the corresponding Pt/Al2O3/Ta/Pt cross-point memristors can be modified precisely. The high I-V linearity, high on/off ratio (around 108), low pulse operation voltage (2.5 V), and multilevel conductance states (314 states) of the Pt/Al2O3/Ta/Pt cross-point memristor are demonstrated. More importantly, the mechanism behind this phenomenon is studied. This work deepens our understanding of the working mechanism of memristors and paves the way for using memristors in a broad spectrum of applications.

中文翻译:

通过控制开关层材料的结晶度进行忆阻器件特性工程

忆阻器件(即忆阻器)在许多新兴应用中可能会非常有益,这些新兴应用可能在未来的电子系统中发挥重要作用,例如生物启发式神经形态计算,高密度非易失性存储器和现场可编程门阵列。因此,必须针对不同的应用精心设计忆阻器特性(例如工作电压,开/关比和电导状态数)。在这里,我们演示了一种通过控制开关层材料的结晶度来专门修改忆阻器特性的方法。通过设定原子层沉积的温度,可以控制所沉积的Al 2 O 3的结晶度。使用不同的结晶Al 2 O如图3所示,作为忆阻器开关层,可以精确地修改相应的Pt / Al 2 O 3 / Ta / Pt交叉点忆阻器的特性。Pt / Al 2 O 3 / Ta / Pt交叉点忆阻器具有高IV线性,高开/关比(大约10 8),低脉冲工作电压(2.5 V)和多电导状态(314个状态)。演示。更重要的是,研究了这种现象背后的机理。这项工作加深了我们对忆阻器工作机制的理解,并为在广泛的应用中使用忆阻器铺平了道路。
更新日期:2020-06-23
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